Microchip Technology MSC70SM120JCU3
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MSC70SM120JCU3
1610-MSC70SM120JCU3
晶体管 - FET,MOSFET - 单个
SOT-227-4, miniBLOC
大陆
立即发货

SICFET N-CH 1.2KV 89A SOT227
1最小包装量--
MSC70SM120JCU3详情
Microchip Technology MSC70SM120JCU3重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
安装类型
底座安装
包装/外壳
SOT-227-4, miniBLOC
厂商
微芯片技术
Package
Tube
Base Product Number
MSC70SM120
Product Status
活跃
Current - Continuous Drain (Id) @ 25℃
89A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
20V
Voltage - Gate Threshold (Vgs(th)) (Max) @ Id
2.8V @ 1mA
Power Dissipation (Max)
395W (Tc)
Continuous Drain Current Id
89
Id - Continuous Drain Current
89 A
Typical Turn-Off Delay Time
50 ns
RoHS
Details
Rds On - Drain-Source Resistance
31 mOhms
Brand
Microchip Technology / Atmel
Manufacturer
Microchip
Mounting Styles
螺钉安装
Factory Pack QuantityFactory Pack Quantity
1
Minimum Operating Temperature
- 40 C
Vgs - Gate-Source Voltage
- 10 V, 25 V
Maximum Operating Temperature
+ 125 C
Transistor Polarity
N-Channel
Pd - Power Dissipation
395 W
Vgs th - Gate-Source Threshold Voltage
1.8 V
Typical Turn-On Delay Time
30 ns
Vds - Drain-Source Breakdown Voltage
1200 V
Vr - Reverse Voltage
1200 V
系列
-
操作温度
-55°C ~ 150°C (TJ)
包装
Bulk
类型
巴克斩波器
子类别
Discrete Semiconductor Modules
功率耗散
395
场效应管类型
N-Channel
Rds On(Max)@Id,Vgs
31mOhm @ 40A, 20V
输入电容(Ciss)(Max)@Vds
3020 pF @ 1000 V
门极电荷(Qg)(最大)@Vgs
232 nC @ 20 V
上升时间
30 ns
漏源电压 (Vdss)
1200 V
Vgs(最大值)
+25V, -10V
产品类别
Discrete Semiconductor Modules
场效应管特性
-
产品
功率MOSFET模块
Vf-正向电压
1.5 V at 50 A
产品类别
Discrete Semiconductor Modules
MSC70SM120JCU3拓展信息
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