Nexperia GAN080-650EBEZ

包装/外壳

DFN8080-8

Channel Mode

Enhancement

Id - Continuous Drain Current

29 A

Maximum Operating Temperature

+ 150 C

Minimum Operating Temperature

- 55 C

Mounting Styles

SMD/SMT

Pd - Power Dissipation

188 W

Qg - Gate Charge

6.2 nC

Rds On - Drain-Source Resistance

80 mOhms

Transistor Polarity

N-Channel

Vds - Drain-Source Breakdown Voltage

650 V

Vgs - Gate-Source Voltage

7 V

Vgs th - Gate-Source Threshold Voltage

2.5 V

技术

GaN

通道数量

1 Channel