Nexperia PMN30ENEAH

安装类型

表面贴装

包装/外壳

SC-74, SOT-457

供应商器件包装

6-TSOP

Package

Tape & Reel (TR)

Current - Continuous Drain (Id) @ 25℃

5.4A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

厂商

Nexperia USA Inc.

Power Dissipation (Max)

667mW (Ta), 7.5W (Tc)

Product Status

活跃

Vds - Drain-Source Breakdown Voltage

40 V

Vgs th - Gate-Source Threshold Voltage

2.5 V

Pd - Power Dissipation

667 mW

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 175 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Qg - Gate Charge

11.7 nC

Rds On - Drain-Source Resistance

57 mOhms

Id - Continuous Drain Current

5.4 A

操作温度

-55°C ~ 175°C (TJ)

系列

Automotive, AEC-Q101

技术

MOSFET (Metal Oxide)

通道数量

1 Channel

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

30mOhm @ 5.4A, 10V

不同 Id 时 Vgs(th)（最大值）

2.5V @ 250µA

输入电容(Ciss)(Max)@Vds

440 pF @ 20 V

门极电荷(Qg)(最大)@Vgs

11.7 nC @ 10 V

漏源电压 (Vdss)

40 V

Vgs（最大值）

±20V

场效应管特性

-