Nexperia PMPB10R3XNX

安装类型

表面贴装

包装/外壳

6-UDFN Exposed Pad

供应商器件包装

DFN2020M-6

Package

Tape & Reel (TR);Cut Tape (CT);Digi-Reel®;

Base Product Number

PMPB10

Current - Continuous Drain (Id) @ 25℃

8.9A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 4.5V

厂商

Nexperia USA Inc.

Power Dissipation (Max)

1.5W (Ta), 19W (Tc)

Product Status

活跃

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

0.9V @ 250µA

Vds - Drain-Source Breakdown Voltage

30 V

Vgs th - Gate-Source Threshold Voltage

900 mV

Pd - Power Dissipation

3 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 12 V, + 12 V

Minimum Operating Temperature

- 55 C

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Qg - Gate Charge

6.6 nC

Rds On - Drain-Source Resistance

12.2 mOhms

Id - Continuous Drain Current

8.9 A

操作温度

-55°C ~ 150°C (TJ)

系列

-

技术

MOSFET (Metal Oxide)

通道数量

1 Channel

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

12.2mOhm @ 8.9A, 4.5V

输入电容(Ciss)(Max)@Vds

770 pF @ 15 V

门极电荷(Qg)(最大)@Vgs

9.9 nC @ 4.5 V

漏源电压 (Vdss)

30 V

Vgs（最大值）

±12V

场效应管特性

-