Nexperia PMPB11ENX

包装/外壳

DFN2020MD-6-8

安装类型

表面贴装

供应商器件包装

DFN2020MD-6

Fall Time

9 ns

Forward Transconductance - Min

45 S

Factory Pack QuantityFactory Pack Quantity

3000

Typical Turn-Off Delay Time

17 ns

Typical Turn-On Delay Time

9 ns

Part # Aliases

934066621184

RoHS

Details

Mounting Styles

SMD/SMT

Transistor Polarity

N-Channel

Vds - Drain-Source Breakdown Voltage

30 V

Id - Continuous Drain Current

13 A

Rds On - Drain-Source Resistance

14.5 mOhms

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Vgs th - Gate-Source Threshold Voltage

2 V

Qg - Gate Charge

13.7 nC

Minimum Operating Temperature

- 55 C

Maximum Operating Temperature

+ 150 C

Pd - Power Dissipation

12.5 W

Channel Mode

Enhancement

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

2V @ 250µA

Product Status

活跃

Power Dissipation (Max)

1.7W (Ta), 12.5W (Tc)

厂商

Nexperia USA Inc.

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Current - Continuous Drain (Id) @ 25℃

9A (Ta)

Base Product Number

PMPB11

Package

Tape & Reel (TR)

包装

MouseReel

系列

-

操作温度

-55°C ~ 150°C (TJ)

通道数量

1 Channel

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

14.5mOhm @ 9A, 10V

输入电容(Ciss)(Max)@Vds

840 pF @ 15 V

门极电荷(Qg)(最大)@Vgs

20.6 nC @ 10 V

上升时间

10 ns

漏源电压 (Vdss)

30 V

Vgs（最大值）

±20V

晶体管类型

N-Channel Trench MOSFET

场效应管特性

-