Nexperia PSMN4R5-80YSFX

包装/外壳

LFPAK56-4

Vgs th - Gate-Source Threshold Voltage

4 V

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Vds - Drain-Source Breakdown Voltage

80 V

Transistor Polarity

N-Channel

Rds On - Drain-Source Resistance

4.5 mOhms

Qg - Gate Charge

60 nC

Pd - Power Dissipation

238 W

Mounting Styles

SMD/SMT

Minimum Operating Temperature

- 55 C

Maximum Operating Temperature

+ 175 C

Id - Continuous Drain Current

100 A

Channel Mode

Enhancement

技术

Si

通道数量

1 Channel