Nexperia PSMN5R5-100YSFX

包装/外壳

Power SO-8

安装类型

表面贴装

供应商器件包装

LFPAK56, Power-SO8

RoHS

Details

Mounting Styles

SMD/SMT

Transistor Polarity

N-Channel

Vds - Drain-Source Breakdown Voltage

100 V

Id - Continuous Drain Current

115 A

Rds On - Drain-Source Resistance

5.6 mOhms

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Vgs th - Gate-Source Threshold Voltage

4 V

Qg - Gate Charge

64 nC

Minimum Operating Temperature

- 55 C

Maximum Operating Temperature

+ 175 C

Pd - Power Dissipation

238 W

Channel Mode

Enhancement

Factory Pack QuantityFactory Pack Quantity

1500

Part # Aliases

934661576115

Package

Tape & Reel (TR);Cut Tape (CT);Digi-Reel®;

Base Product Number

PSMN5

Current - Continuous Drain (Id) @ 25℃

115A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

7V, 10V

厂商

Nexperia USA Inc.

Power Dissipation (Max)

238W (Ta)

Product Status

活跃

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

4V @ 1mA

包装

MouseReel

操作温度

-55°C ~ 175°C (TJ)

系列

-

通道数量

1 Channel

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

5.5mOhm @ 25A, 10V

输入电容(Ciss)(Max)@Vds

6238 pF @ 50 V

门极电荷(Qg)(最大)@Vgs

95 nC @ 10 V

漏源电压 (Vdss)

100 V

Vgs（最大值）

±20V

场效应管特性

-