Nexperia USA Inc. 2N7002HR
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2N7002HR
1729-2N7002HR
晶体管 - FET,MOSFET - 单个
TO-236-3, SC-59, SOT-23-3
大陆
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2N7002H/SOT23/TO-236AB
--最小包装量--
2N7002HR详情
Nexperia USA Inc. 2N7002HR重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
安装类型
表面贴装
包装/外壳
TO-236-3, SC-59, SOT-23-3
供应商器件包装
TO-236AB
厂商
Nexperia USA Inc.
Product Status
活跃
Current - Continuous Drain (Id) @ 25℃
300mA (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Power Dissipation (Max)
830mW (Tc)
MSL
MSL 1 - Unlimited
Qualification
AEC-Q101
Continuous Drain Current Id
360mA
Vds - Drain-Source Breakdown Voltage
60 V
Typical Turn-On Delay Time
2 ns
Vgs th - Gate-Source Threshold Voltage
2.4 V
Pd - Power Dissipation
420 mW
Transistor Polarity
N-Channel
Maximum Operating Temperature
+ 150 C
Vgs - Gate-Source Voltage
- 20 V, + 20 V
Minimum Operating Temperature
- 55 C
Factory Pack QuantityFactory Pack Quantity
3000
Mounting Styles
SMD/SMT
Channel Mode
Enhancement
Part # Aliases
934661228215
Manufacturer
Nexperia
Brand
Nexperia
Qg - Gate Charge
300 pC
Rds On - Drain-Source Resistance
1.6 Ohms
RoHS
Details
Typical Turn-Off Delay Time
6 ns
Id - Continuous Drain Current
360 mA
系列
-
操作温度
-65°C ~ 150°C (TJ)
包装
MouseReel
子类别
MOSFETs
配置
Single
通道数量
1 Channel
功率耗散
340mW
场效应管类型
N-Channel
Rds On(Max)@Id,Vgs
5Ohm @ 500mA, 10V
不同 Id 时 Vgs(th)(最大值)
2.5V @ 250μA
输入电容(Ciss)(Max)@Vds
50 pF @ 10 V
上升时间
3 ns
漏源电压 (Vdss)
60 V
Vgs(最大值)
±30V
产品类别
MOSFET
信道型
N通道
场效应管特性
-
产品类别
MOSFET
2N7002HR拓展信息
Nexperia USA Inc.
Nexperia USA Inc.
Nexperia USA Inc.
Nexperia USA Inc.
Nexperia USA Inc.
Nexperia USA Inc.
Nexperia USA Inc.
Nexperia USA Inc.
Nexperia USA Inc.
Nexperia USA Inc.







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