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价格梯度
内地含税价
1
¥1.455483
10
¥1.3731
100
¥1.295375
500
¥1.222054
1000
¥1.152876
Nexperia USA Inc. 2N7002HWX
- 收藏
- 对比
2N7002HWX
1729-2N7002HWX
晶体管 - FET,MOSFET - 单个
TO-236-3, SC-59, SOT-23-3
大陆
立即发货

2N7002HW/SOT323/SC-70
--最小包装量--
¥
总价: ¥
2N7002HWX详情
Nexperia USA Inc. 2N7002HWX重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
安装类型
表面贴装
包装/外壳
TO-236-3, SC-59, SOT-23-3
供应商器件包装
TO-236AB
厂商
Nexperia USA Inc.
Product Status
活跃
Current - Continuous Drain (Id) @ 25℃
300mA (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Power Dissipation (Max)
830mW (Tc)
MSL
MSL 1 - Unlimited
Qualification
AEC-Q101
Continuous Drain Current Id
310mA
Vds - Drain-Source Breakdown Voltage
60 V
Vgs th - Gate-Source Threshold Voltage
2.4 V
Pd - Power Dissipation
310 mW
Transistor Polarity
N-Channel
Maximum Operating Temperature
+ 150 C
Vgs - Gate-Source Voltage
- 20 V, + 20 V
Minimum Operating Temperature
- 55 C
Mounting Styles
SMD/SMT
Channel Mode
Enhancement
Qg - Gate Charge
300 pC
Rds On - Drain-Source Resistance
1.6 Ohms
Id - Continuous Drain Current
310 mA
系列
-
操作温度
-65°C ~ 150°C (TJ)
通道数量
1 Channel
功率耗散
260mW
场效应管类型
N-Channel
Rds On(Max)@Id,Vgs
5Ohm @ 500mA, 10V
不同 Id 时 Vgs(th)(最大值)
2.5V @ 250μA
输入电容(Ciss)(Max)@Vds
50 pF @ 10 V
漏源电压 (Vdss)
60 V
Vgs(最大值)
±30V
信道型
N通道
场效应管特性
-
2N7002HWX拓展信息
Nexperia USA Inc.
Nexperia USA Inc.
Nexperia USA Inc.
Nexperia USA Inc.
Nexperia USA Inc.
Nexperia USA Inc.
Nexperia USA Inc.
Nexperia USA Inc.
Nexperia USA Inc.
Nexperia USA Inc.






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