Nexperia USA Inc. 2N7002KQBZ

安装类型

Surface Mount, Wettable Flank

包装/外壳

3-XDFN Exposed Pad

供应商器件包装

DFN1110D-3

厂商

Nexperia USA Inc.

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

720mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

2.6V @ 250μA

Power Dissipation (Max)

420mW (Ta), 4.2W (Tc)

MSL

-

Qualification

AEC-Q101

Continuous Drain Current Id

720mA

Id - Continuous Drain Current

720 mA

Typical Turn-Off Delay Time

6 ns

RoHS

Details

Rds On - Drain-Source Resistance

850 mOhms

Qg - Gate Charge

610 pC

Brand

Nexperia

Manufacturer

Nexperia

Part # Aliases

934662647147

Channel Mode

Enhancement

Forward Transconductance - Min

1.1 S

Mounting Styles

SMD/SMT

Factory Pack QuantityFactory Pack Quantity

5000

Minimum Operating Temperature

- 55 C

Vgs - Gate-Source Voltage

- 16 V, + 16 V

Maximum Operating Temperature

+ 150 C

Transistor Polarity

N-Channel

Pd - Power Dissipation

4.2 W

Vgs th - Gate-Source Threshold Voltage

2.6 V

Typical Turn-On Delay Time

1 ns

Vds - Drain-Source Breakdown Voltage

60 V

系列

Automotive, AEC-Q101

操作温度

-55°C ~ 150°C (TJ)

包装

MouseReel

子类别

MOSFETs

配置

Single

通道数量

1 Channel

功率耗散

960mW

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

850mOhm @ 720mA, 10V

输入电容(Ciss)(Max)@Vds

28 pF @ 30 V

门极电荷(Qg)(最大)@Vgs

0.92 nC @ 10 V

上升时间

1 ns

漏源电压 (Vdss)

60 V

Vgs（最大值）

±16V

产品类别

MOSFET

晶体管类型

N-Channel Trench MOSFET

信道型

N通道

场效应管特性

-

产品类别

MOSFET