Nexperia USA Inc. BSH205G2AR

安装类型

表面贴装

包装/外壳

TO-236-3, SC-59, SOT-23-3

供应商器件包装

TO-236AB

厂商

Nexperia USA Inc.

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

2.6A (Ta)

Power Dissipation (Max)

610mW (Ta), 10W (Tc)

Base Product Number

BSH205

Continuous Drain Current Id

2.6

MSL

MSL 1 - Unlimited

Qualification

AEC-Q101

Vds - Drain-Source Breakdown Voltage

20 V

Typical Turn-On Delay Time

5 ns

Vgs th - Gate-Source Threshold Voltage

900 mV

Pd - Power Dissipation

1.3 W

Transistor Polarity

P-Channel

Maximum Operating Temperature

+ 175 C

Vgs - Gate-Source Voltage

- 8 V, + 8 V

Unit Weight

0.000282 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

3000

Mounting Styles

SMD/SMT

Forward Transconductance - Min

5 S

Channel Mode

Enhancement

Part # Aliases

934661354215

Manufacturer

Nexperia

Brand

Nexperia

Qg - Gate Charge

4.6 nC

Rds On - Drain-Source Resistance

118 mOhms

RoHS

Details

Typical Turn-Off Delay Time

35 ns

Id - Continuous Drain Current

2.6 A

操作温度

-55°C ~ 175°C (TJ)

包装

MouseReel

子类别

MOSFETs

配置

Single

通道数量

1 Channel

功率耗散

1.3

场效应管类型

P-Channel

Rds On(Max)@Id,Vgs

118mOhm @ 2.6A, 4.5V

不同 Id 时 Vgs(th)（最大值）

900mV @ 250μA

输入电容(Ciss)(Max)@Vds

421 pF @ 10 V

门极电荷(Qg)(最大)@Vgs

7 nC @ 4.5 V

上升时间

13 ns

漏源电压 (Vdss)

20 V

Vgs（最大值）

±8V

产品类别

MOSFET

晶体管类型

1 P-channel Trench MOSFET

信道型

P Channel

场效应管特性

-

产品类别

MOSFET