Nexperia USA Inc. BSS84AKQBZ

安装类型

Surface Mount, Wettable Flank

包装/外壳

3-XDFN Exposed Pad

供应商器件包装

DFN1110D-3

厂商

Nexperia USA Inc.

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

270mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

2.1V @ 250μA

Power Dissipation (Max)

420mW (Ta), 4.2W (Tc)

Continuous Drain Current Id

270

Qualification

AEC-Q101

MSL

MSL 1 - Unlimited

Vds - Drain-Source Breakdown Voltage

50 V

Vgs th - Gate-Source Threshold Voltage

2.1 V

Pd - Power Dissipation

960 mW

Transistor Polarity

P-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 12 V

Minimum Operating Temperature

- 55 C

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Qg - Gate Charge

400 pC

Rds On - Drain-Source Resistance

7.5 Ohms

Id - Continuous Drain Current

270 mA

系列

-

操作温度

-55°C ~ 150°C (TJ)

通道数量

1 Channel

功率耗散

960

场效应管类型

P-Channel

Rds On(Max)@Id,Vgs

7.5Ohm @ 100mA, 10V

输入电容(Ciss)(Max)@Vds

23.2 pF @ 25 V

门极电荷(Qg)(最大)@Vgs

0.6 nC @ 10 V

漏源电压 (Vdss)

50 V

Vgs（最大值）

+12V, -20V

信道型

P Channel

场效应管特性

-