Nexperia USA Inc. BUK9M20-60ELX

安装类型

表面贴装

包装/外壳

SOT-1210, 8-LFPAK33 (5-Lead)

供应商器件包装

LFPAK33

厂商

Nexperia USA Inc.

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

40A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

2.1V @ 1mA

Power Dissipation (Max)

79.4W (Tc)

MSL

MSL 1 - Unlimited

Qualification

AEC-Q101

Continuous Drain Current Id

40A

Vds - Drain-Source Breakdown Voltage

60 V

Typical Turn-On Delay Time

11 ns

Vgs th - Gate-Source Threshold Voltage

2.1 V

Pd - Power Dissipation

79.4 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 175 C

Vgs - Gate-Source Voltage

- 10 V, + 10 V

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

1500

Mounting Styles

SMD/SMT

Forward Transconductance - Min

40 S

Channel Mode

Enhancement

Part # Aliases

934664844115

Manufacturer

Nexperia

Brand

Nexperia

Qg - Gate Charge

40 nC

Rds On - Drain-Source Resistance

13 mOhms

RoHS

Details

Typical Turn-Off Delay Time

25 ns

Id - Continuous Drain Current

40 A

系列

-

操作温度

-55°C ~ 175°C (TJ)

包装

切割胶带

子类别

MOSFETs

通道数量

1 Channel

功率耗散

79.4W

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

21mOhm @ 15A, 10V

输入电容(Ciss)(Max)@Vds

2941 pF @ 25 V

门极电荷(Qg)(最大)@Vgs

56 nC @ 10 V

上升时间

25 ns

漏源电压 (Vdss)

60 V

Vgs（最大值）

±10V

产品类别

MOSFET

晶体管类型

1 N-Channel

信道型

N通道

场效应管特性

-

产品类别

MOSFET