Nexperia USA Inc. GAN190-650EBEZ
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GAN190-650EBEZ
1729-GAN190-650EBEZ
晶体管 - FET,MOSFET - 单个
8-VDFN Exposed Pad
大陆
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650 V, 190 MOHM GALLIUM NITRIDE
1最小包装量--
GAN190-650EBEZ详情
Nexperia USA Inc. GAN190-650EBEZ重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
安装类型
Surface Mount, Wettable Flank
包装/外壳
8-VDFN Exposed Pad
供应商器件包装
DFN8080-8
厂商
Nexperia USA Inc.
Current - Continuous Drain (Id) @ 25℃
11.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
6V
Voltage - Gate Threshold (Vgs(th)) (Max) @ Id
2.5V @ 12.2mA
Power Dissipation (Max)
125W (Tc)
Base Product Number
GAN190
包装
Tape & Reel (TR)
操作温度
-55°C ~ 150°C (TJ)
零件状态
活跃
场效应管类型
N-Channel
Rds On(Max)@Id,Vgs
190mOhm @ 3.9A, 6V
输入电容(Ciss)(Max)@Vds
96 pF @ 400 V
门极电荷(Qg)(最大)@Vgs
2.8 nC @ 6 V
漏源电压 (Vdss)
650 V
Vgs(最大值)
+7V, -1.4V
GAN190-650EBEZ拓展信息
Nexperia USA Inc.
Nexperia USA Inc.
Nexperia USA Inc.
Nexperia USA Inc.
Nexperia USA Inc.
Nexperia USA Inc.
Nexperia USA Inc.
Nexperia USA Inc.
Nexperia USA Inc.
Nexperia USA Inc.








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