Nexperia USA Inc. NX6008NBKR

安装类型

表面贴装

包装/外壳

TO-236-3, SC-59, SOT-23-3

供应商器件包装

TO-236AB

厂商

Nexperia USA Inc.

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

270mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.5V, 4.5V

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

900mV @ 250μA

Power Dissipation (Max)

270mW (Ta), 1.3W (Tc)

Vds - Drain-Source Breakdown Voltage

60 V

Typical Turn-On Delay Time

1 ns

Vgs th - Gate-Source Threshold Voltage

900 mV

Pd - Power Dissipation

330 mW

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 8 V, + 8 V

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

3000

Mounting Styles

SMD/SMT

Forward Transconductance - Min

1 S

Channel Mode

Enhancement

Part # Aliases

934662514215

Manufacturer

Nexperia

Brand

Nexperia

Qg - Gate Charge

500 pC

Rds On - Drain-Source Resistance

2.8 Ohms

RoHS

Details

Typical Turn-Off Delay Time

5 ns

Id - Continuous Drain Current

270 mA

系列

-

操作温度

-55°C ~ 150°C (TJ)

包装

MouseReel

子类别

MOSFETs

配置

Single

通道数量

1 Channel

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

2.8Ohm @ 300mA, 4.5V

输入电容(Ciss)(Max)@Vds

27 pF @ 30 V

门极电荷(Qg)(最大)@Vgs

0.7 nC @ 4.5 V

上升时间

2 ns

漏源电压 (Vdss)

60 V

Vgs（最大值）

±8V

产品类别

MOSFET

晶体管类型

Trench MOSFET

场效应管特性

-

产品类别

MOSFET