Nexperia USA Inc. NXV75UPR

安装类型

表面贴装

包装/外壳

TO-236-3, SC-59, SOT-23-3

供应商器件包装

TO-236AB

厂商

Nexperia USA Inc.

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

1.8A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 4.5V

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

1V @ 250μA

Power Dissipation (Max)

340mW (Ta), 2.1W (Tc)

Continuous Drain Current Id

1.8

Qualification

-

Vds - Drain-Source Breakdown Voltage

20 V

Typical Turn-On Delay Time

5 ns

Vgs th - Gate-Source Threshold Voltage

1 V

Pd - Power Dissipation

340 mW

Transistor Polarity

P-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 8 V, + 8 V

Unit Weight

0.000282 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

3000

Mounting Styles

SMD/SMT

Forward Transconductance - Min

5 S

Part # Aliases

934661662215

Manufacturer

Nexperia

Brand

Nexperia

Qg - Gate Charge

6.3 nC

Rds On - Drain-Source Resistance

90 mOhms

RoHS

Details

Typical Turn-Off Delay Time

36 ns

Id - Continuous Drain Current

1.8 A

操作温度

-55°C ~ 150°C (TJ)

包装

MouseReel

子类别

MOSFETs

通道数量

1 Channel

功率耗散

480

场效应管类型

P-Channel

Rds On(Max)@Id,Vgs

90mOhm @ 1.8A, 4.5V

输入电容(Ciss)(Max)@Vds

330 pF @ 10 V

门极电荷(Qg)(最大)@Vgs

6.3 nC @ 4.5 V

上升时间

11 ns

漏源电压 (Vdss)

20 V

Vgs（最大值）

±8V

产品类别

MOSFET

信道型

P Channel

场效应管特性

-

产品类别

MOSFET