Nexperia USA Inc. PMCB60XNZ

安装类型

表面贴装

包装/外壳

3-XFDFN

供应商器件包装

DSN1006-3

厂商

Nexperia USA Inc.

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

4A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 4.5V

Power Dissipation (Max)

480mW (Ta), 7W (Tc)

MSL

MSL 1 - Unlimited

Qualification

-

Continuous Drain Current Id

4A

Vds - Drain-Source Breakdown Voltage

30 V

Typical Turn-On Delay Time

2 ns

Vgs th - Gate-Source Threshold Voltage

1.1 V

Pd - Power Dissipation

1 W

Id - Continuous Drain Current

4.8 A

Typical Turn-Off Delay Time

5 ns

RoHS

Details

Rds On - Drain-Source Resistance

50 mOhms

Qg - Gate Charge

2 nC

Brand

Nexperia

Manufacturer

Nexperia

Part # Aliases

934661654326

Channel Mode

Enhancement

Mounting Styles

SMD/SMT

Factory Pack QuantityFactory Pack Quantity

10000

Minimum Operating Temperature

- 55 C

Vgs - Gate-Source Voltage

- 12 V, + 12 V

Maximum Operating Temperature

+ 150 C

Transistor Polarity

N-Channel

系列

-

操作温度

-55°C ~ 150°C (TJ)

包装

MouseReel

子类别

MOSFETs

通道数量

1 Channel

功率耗散

480mW

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

50mOhm @ 4A, 4.5V

不同 Id 时 Vgs(th)（最大值）

1.1V @ 250μA

输入电容(Ciss)(Max)@Vds

241 pF @ 15 V

门极电荷(Qg)(最大)@Vgs

2.7 nC @ 4.5 V

上升时间

4 ns

漏源电压 (Vdss)

30 V

Vgs（最大值）

±12V

产品类别

MOSFET

晶体管类型

1 N-Channel

信道型

N通道

场效应管特性

-

产品类别

MOSFET