Nexperia USA Inc. PMH400UNEH

包装/外壳

3-XFDFN

安装类型

表面贴装

供应商器件包装

DFN0606-3

Base Product Number

PMH400

Power Dissipation (Max)

360mW (Ta), 2.23W (Tc)

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

950mV @ 250μA

Drive Voltage (Max Rds On, Min Rds On)

1.5V, 4.5V

Current - Continuous Drain (Id) @ 25℃

900mA (Ta)

Product Status

活跃

厂商

Nexperia USA Inc.

Continuous Drain Current Id

900

MSL

MSL 1 - Unlimited

Qualification

-

Vds - Drain-Source Breakdown Voltage

30 V

Typical Turn-On Delay Time

1 ns

Vgs th - Gate-Source Threshold Voltage

950 mV

Pd - Power Dissipation

660 mW

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 8 V, + 8 V

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

10000

Mounting Styles

SMD/SMT

Forward Transconductance - Min

1.6 S

Channel Mode

Enhancement

Part # Aliases

935690958125

Manufacturer

Nexperia

Brand

Nexperia

Qg - Gate Charge

620 pC

Rds On - Drain-Source Resistance

460 mOhms

RoHS

Details

Typical Turn-Off Delay Time

4 ns

Id - Continuous Drain Current

900 mA

操作温度

-55°C ~ 150°C (TJ)

包装

MouseReel

子类别

MOSFETs

配置

Single

通道数量

1 Channel

功率耗散

660

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

460mOhm @ 700mA, 4.5V

输入电容(Ciss)(Max)@Vds

4540 pF @ 15 V

门极电荷(Qg)(最大)@Vgs

0.93 nC @ 4.5 V

上升时间

2 ns

漏源电压 (Vdss)

30 V

Vgs（最大值）

±8V

产品类别

MOSFET

晶体管类型

1 N-Channel

信道型

N

场效应管特性

-

产品类别

MOSFET