Nexperia USA Inc. PMN15ENEX
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PMN15ENEX
1729-PMN15ENEX
晶体管 - FET,MOSFET - 单个
SC-74, SOT-457
大陆
立即发货

PMN15ENE/SOT457/SC-74
--最小包装量--
PMN15ENEX详情
Nexperia USA Inc. PMN15ENEX重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
安装类型
表面贴装
包装/外壳
SC-74, SOT-457
供应商器件包装
6-TSOP
厂商
Nexperia USA Inc.
Product Status
活跃
Current - Continuous Drain (Id) @ 25℃
6.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Power Dissipation (Max)
667mW (Ta), 7.5W (Tc)
MSL
MSL 1 - Unlimited
Qualification
-
Continuous Drain Current Id
6.4A
Vds - Drain-Source Breakdown Voltage
30 V
Typical Turn-On Delay Time
4 ns
Vgs th - Gate-Source Threshold Voltage
2.5 V
Pd - Power Dissipation
1.7 W
Transistor Polarity
N-Channel
Maximum Operating Temperature
+ 175 C
Vgs - Gate-Source Voltage
- 20 V, + 20 V
Minimum Operating Temperature
- 55 C
Factory Pack QuantityFactory Pack Quantity
3000
Mounting Styles
SMD/SMT
Channel Mode
Enhancement
Part # Aliases
934664406115
Manufacturer
Nexperia
Brand
Nexperia
Qg - Gate Charge
9.5 nC
Rds On - Drain-Source Resistance
24 mOhms
RoHS
Details
Typical Turn-Off Delay Time
15 ns
Id - Continuous Drain Current
6.4 A
系列
-
操作温度
-55°C ~ 175°C (TJ)
子类别
MOSFETs
配置
Single
通道数量
1 Channel
功率耗散
667mW
场效应管类型
N-Channel
Rds On(Max)@Id,Vgs
24mOhm @ 6.4A, 10V
不同 Id 时 Vgs(th)(最大值)
2.5V @ 250μA
输入电容(Ciss)(Max)@Vds
440 pF @ 15 V
门极电荷(Qg)(最大)@Vgs
14 nC @ 10 V
上升时间
18 ns
漏源电压 (Vdss)
30 V
Vgs(最大值)
±20V
产品类别
MOSFET
信道型
N通道
场效应管特性
-
产品类别
MOSFET
PMN15ENEX拓展信息
Nexperia USA Inc.
Nexperia USA Inc.
Nexperia USA Inc.
Nexperia USA Inc.
Nexperia USA Inc.
Nexperia USA Inc.
Nexperia USA Inc.
Nexperia USA Inc.
Nexperia USA Inc.
Nexperia USA Inc.







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