Nexperia USA Inc. PMN25ENEAH
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PMN25ENEAH
1729-PMN25ENEAH
晶体管 - FET,MOSFET - 单个
SC-74, SOT-457
大陆
立即发货

SMALL SIGNAL MOSFET FOR AUTOMOTI
1最小包装量--
PMN25ENEAH详情
Nexperia USA Inc. PMN25ENEAH重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
安装类型
表面贴装
包装/外壳
SC-74, SOT-457
供应商器件包装
6-TSOP
厂商
Nexperia USA Inc.
Product Status
活跃
Current - Continuous Drain (Id) @ 25℃
6.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Voltage - Gate Threshold (Vgs(th)) (Max) @ Id
2.5V @ 250μA
Power Dissipation (Max)
560mW (Ta), 6.25mW (Tc)
Vds - Drain-Source Breakdown Voltage
30 V
Typical Turn-On Delay Time
4 ns
Vgs th - Gate-Source Threshold Voltage
2.5 V
Pd - Power Dissipation
1.7 W
Transistor Polarity
N-Channel
Maximum Operating Temperature
+ 150 C
Vgs - Gate-Source Voltage
- 20 V, + 20 V
Minimum Operating Temperature
- 55 C
Factory Pack QuantityFactory Pack Quantity
3000
Mounting Styles
SMD/SMT
Forward Transconductance - Min
24 S
Channel Mode
Enhancement
Part # Aliases
934069656125
Manufacturer
Nexperia
Brand
Nexperia
Qg - Gate Charge
14 nC
Rds On - Drain-Source Resistance
24 mOhms
RoHS
Details
Typical Turn-Off Delay Time
15 ns
Id - Continuous Drain Current
6.4 A
系列
-
操作温度
-55°C ~ 150°C (TJ)
包装
MouseReel
子类别
MOSFETs
通道数量
1 Channel
场效应管类型
N-Channel
Rds On(Max)@Id,Vgs
24mOhm @ 6.1A, 10V
输入电容(Ciss)(Max)@Vds
597 pF @ 15 V
门极电荷(Qg)(最大)@Vgs
18 nC @ 10 V
上升时间
18 ns
漏源电压 (Vdss)
30 V
Vgs(最大值)
±20V
产品类别
MOSFET
场效应管特性
-
产品类别
MOSFET
PMN25ENEAH拓展信息
Nexperia USA Inc.
Nexperia USA Inc.
Nexperia USA Inc.
Nexperia USA Inc.
Nexperia USA Inc.
Nexperia USA Inc.
Nexperia USA Inc.
Nexperia USA Inc.
Nexperia USA Inc.
Nexperia USA Inc.







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