Nexperia USA Inc. PMPB09R5VPX
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PMPB09R5VPX
1729-PMPB09R5VPX
晶体管 - FET,MOSFET - 单个
6-UDFN Exposed Pad
大陆
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PMPB09R5VP - 12 V, P-CHANNEL TRE
1最小包装量--
PMPB09R5VPX详情
Nexperia USA Inc. PMPB09R5VPX重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
安装类型
表面贴装
包装/外壳
6-UDFN Exposed Pad
供应商器件包装
DFN2020M-6
厂商
Nexperia USA Inc.
Product Status
活跃
Current - Continuous Drain (Id) @ 25℃
10.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.5V, 4.5V
Voltage - Gate Threshold (Vgs(th)) (Max) @ Id
900mV @ 250μA
Power Dissipation (Max)
1.9W (Ta), 12.5W (Tc)
Continuous Drain Current Id
10.5
Qualification
-
MSL
MSL 1 - Unlimited
Vds - Drain-Source Breakdown Voltage
12 V
Vgs th - Gate-Source Threshold Voltage
900 mV
Pd - Power Dissipation
12.5 W
Transistor Polarity
P-Channel
Maximum Operating Temperature
+ 150 C
Vgs - Gate-Source Voltage
- 8 V, + 8 V
Minimum Operating Temperature
- 55 C
Mounting Styles
SMD/SMT
Channel Mode
Enhancement
Qg - Gate Charge
32 nC
Rds On - Drain-Source Resistance
12 mOhms
Id - Continuous Drain Current
15 A
操作温度
-55°C ~ 150°C (TJ)
通道数量
1 Channel
功率耗散
1.9
场效应管类型
P-Channel
Rds On(Max)@Id,Vgs
12mOhm @ 10.5A, 4.5V
输入电容(Ciss)(Max)@Vds
2700 pF @ 6 V
门极电荷(Qg)(最大)@Vgs
46 nC @ 4.5 V
漏源电压 (Vdss)
12 V
Vgs(最大值)
±8V
信道型
P Channel
场效应管特性
-
PMPB09R5VPX拓展信息
Nexperia USA Inc.
Nexperia USA Inc.
Nexperia USA Inc.
Nexperia USA Inc.
Nexperia USA Inc.
Nexperia USA Inc.
Nexperia USA Inc.
Nexperia USA Inc.
Nexperia USA Inc.
Nexperia USA Inc.







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