Nexperia USA Inc. PMPB14XNX
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PMPB14XNX
1729-PMPB14XNX
晶体管 - FET,MOSFET - 单个
6-UDFN Exposed Pad
大陆
立即发货

MOSFET N-CH 40V 8.1A DFN2020MD-6
1最小包装量--
PMPB14XNX详情
Nexperia USA Inc. PMPB14XNX重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
安装类型
表面贴装
包装/外壳
6-UDFN Exposed Pad
供应商器件包装
DFN2020MD-6
厂商
Nexperia USA Inc.
Product Status
活跃
Current - Continuous Drain (Id) @ 25℃
8.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.5V, 4.5V
Voltage - Gate Threshold (Vgs(th)) (Max) @ Id
900mV @ 250μA
Power Dissipation (Max)
3.8W (Ta), 12.5W (Tc)
Base Product Number
PMPB14
MSL
MSL 1 - Unlimited
Qualification
-
Continuous Drain Current Id
8.1A
Vds - Drain-Source Breakdown Voltage
40 V
Typical Turn-On Delay Time
5 ns
Vgs th - Gate-Source Threshold Voltage
900 mV
Pd - Power Dissipation
1.9 W
Transistor Polarity
N-Channel
Maximum Operating Temperature
+ 150 C
Vgs - Gate-Source Voltage
- 8 V, + 8 V
Unit Weight
0.034463 oz
Minimum Operating Temperature
- 55 C
Factory Pack QuantityFactory Pack Quantity
3000
Mounting Styles
SMD/SMT
Forward Transconductance - Min
22 S
Channel Mode
Enhancement
Part # Aliases
934660519115
Manufacturer
Nexperia
Brand
Nexperia
Qg - Gate Charge
19.4 nC
Rds On - Drain-Source Resistance
18 mOhms
RoHS
Details
Typical Turn-Off Delay Time
35 ns
Id - Continuous Drain Current
11.5 A
操作温度
-55°C ~ 150°C (TJ)
包装
MouseReel
子类别
MOSFETs
配置
Single
通道数量
1 Channel
功率耗散
1.9W
场效应管类型
N-Channel
Rds On(Max)@Id,Vgs
18mOhm @ 8.1A, 4.5V
输入电容(Ciss)(Max)@Vds
1625 pF @ 20 V
门极电荷(Qg)(最大)@Vgs
28 nC @ 4.5 V
上升时间
8 ns
漏源电压 (Vdss)
40 V
Vgs(最大值)
±8V
产品类别
MOSFET
晶体管类型
1 N-Channel
信道型
N通道
场效应管特性
-
产品类别
MOSFET
PMPB14XNX拓展信息
Nexperia USA Inc.
Nexperia USA Inc.
Nexperia USA Inc.
Nexperia USA Inc.
Nexperia USA Inc.
Nexperia USA Inc.
Nexperia USA Inc.
Nexperia USA Inc.
Nexperia USA Inc.
Nexperia USA Inc.







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