Nexperia USA Inc. PMV15ENER

安装类型

表面贴装

包装/外壳

TO-236-3, SC-59, SOT-23-3

供应商器件包装

TO-236AB

厂商

Nexperia USA Inc.

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

6.2A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

2.5V @ 250μA

Power Dissipation (Max)

700mW (Ta), 8.3W (Tc)

MSL

MSL 1 - Unlimited

Qualification

-

Continuous Drain Current Id

6.2A

Id - Continuous Drain Current

6.2 A

Typical Turn-Off Delay Time

15 ns

RoHS

Details

Rds On - Drain-Source Resistance

20 mOhms

Qg - Gate Charge

9.5 nC

Brand

Nexperia

Manufacturer

Nexperia

Part # Aliases

934664412215

Channel Mode

Enhancement

Mounting Styles

SMD/SMT

Factory Pack QuantityFactory Pack Quantity

3000

Minimum Operating Temperature

- 55 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Maximum Operating Temperature

+ 175 C

Transistor Polarity

N-Channel

Pd - Power Dissipation

1.3 W

Vgs th - Gate-Source Threshold Voltage

2.5 V

Typical Turn-On Delay Time

4 ns

Vds - Drain-Source Breakdown Voltage

30 V

系列

-

操作温度

-55°C ~ 175°C (TJ)

子类别

MOSFETs

配置

Single

通道数量

1 Channel

功率耗散

700mW

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

20mOhm @ 5.8A, 10V

输入电容(Ciss)(Max)@Vds

440 pF @ 15 V

门极电荷(Qg)(最大)@Vgs

14 nC @ 10 V

上升时间

18 ns

漏源电压 (Vdss)

30 V

Vgs（最大值）

±20V

产品类别

MOSFET

信道型

N通道

场效应管特性

-

产品类别

MOSFET