Nexperia USA Inc. PMV28ENER

安装类型

表面贴装

包装/外壳

TO-236-3, SC-59, SOT-23-3

供应商器件包装

TO-236AB

Power Dissipation (Max)

660mW (Ta), 8.3W (Tc)

厂商

Nexperia USA Inc.

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

4.4A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

2.5V @ 250μA

MSL

MSL 1 - Unlimited

Qualification

-

Continuous Drain Current Id

4.4A

Id - Continuous Drain Current

4.4 A

Rds On - Drain-Source Resistance

37 mOhms

Qg - Gate Charge

5.3 nC

Channel Mode

Enhancement

Mounting Styles

SMD/SMT

Minimum Operating Temperature

- 55 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Maximum Operating Temperature

+ 175 C

Transistor Polarity

N-Channel

Pd - Power Dissipation

1.25 W

Vgs th - Gate-Source Threshold Voltage

2.5 V

Vds - Drain-Source Breakdown Voltage

30 V

操作温度

-55°C ~ 175°C (TJ)

系列

-

通道数量

1 Channel

功率耗散

660mW

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

37mOhm @ 4.4A, 10V

输入电容(Ciss)(Max)@Vds

266 pF @ 15 V

门极电荷(Qg)(最大)@Vgs

8 nC @ 10 V

漏源电压 (Vdss)

30 V

Vgs（最大值）

±20V

信道型

N通道

场效应管特性

-