Nexperia USA Inc. PMV50XNEAR

安装类型

表面贴装

包装/外壳

TO-236-3, SC-59, SOT-23-3

引脚数

3

供应商器件包装

TO-236AB

厂商

Nexperia USA Inc.

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

3.4A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 8V

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

1.25V @ 250μA

Power Dissipation (Max)

590mW (Ta), 5.6W (Tc)

Continuous Drain Current Id

3.4

Package Type

SOT-23

Qualification

AEC-Q101

MSL

MSL 1 - Unlimited

Maximum Operating Temperature

+ 175 C

Transistor Polarity

N-Channel

Pd - Power Dissipation

5.6 W

Vgs th - Gate-Source Threshold Voltage

1.25 V

Typical Turn-On Delay Time

2 ns

Vds - Drain-Source Breakdown Voltage

30 V

Vgs - Gate-Source Voltage

- 12 V, + 12 V

Unit Weight

0.000282 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

3000

Mounting Styles

SMD/SMT

Forward Transconductance - Min

6 S

Channel Mode

Enhancement

Part # Aliases

934662573215

Manufacturer

Nexperia

Brand

Nexperia

Qg - Gate Charge

3.3 nC

Rds On - Drain-Source Resistance

57 mOhms

RoHS

Details

Typical Turn-Off Delay Time

7 ns

Id - Continuous Drain Current

3.4 A

操作温度

-55°C ~ 175°C (TJ)

包装

MouseReel

子类别

MOSFETs

配置

Single

通道数量

1 Channel

功率耗散

1.3

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

57mOhm @ 3.4A, 8V

输入电容(Ciss)(Max)@Vds

296 pF @ 15 V

门极电荷(Qg)(最大)@Vgs

5 nC @ 4.5 V

上升时间

4 ns

漏源电压 (Vdss)

30 V

Vgs（最大值）

±12V

产品类别

MOSFET

晶体管类型

Trench MOSFET

信道型

N

场效应管特性

-

产品类别

MOSFET