Nexperia USA Inc. PSMN2R0-55YLHX

安装类型

表面贴装

包装/外壳

SOT-1023, 4-LFPAK

引脚数

4

供应商器件包装

LFPAK56, Power-SO8

厂商

Nexperia USA Inc.

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

200A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

2.2V @ 1mA

Power Dissipation (Max)

333W (Ta)

Continuous Drain Current Id

200

MSL

MSL 1 - Unlimited

Qualification

-

Package Type

LFPAK56E

Number of Elements per Chip

1

Vds - Drain-Source Breakdown Voltage

55 V

Vgs th - Gate-Source Threshold Voltage

2.2 V

Pd - Power Dissipation

333 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 175 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Qg - Gate Charge

119 nC

Rds On - Drain-Source Resistance

2.1 mOhms

Id - Continuous Drain Current

200 A

系列

-

操作温度

-55°C ~ 175°C (TJ)

通道数量

1 Channel

功率耗散

333

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

2.1mOhm @ 25A, 10V

输入电容(Ciss)(Max)@Vds

11353 pF @ 27 V

门极电荷(Qg)(最大)@Vgs

184 nC @ 10 V

漏源电压 (Vdss)

55 V

Vgs（最大值）

±20V

信道型

N

场效应管特性

-