Nexperia USA Inc. PSMN3R5-80YSFX

安装类型

表面贴装

包装/外壳

SOT-1023, 4-LFPAK

引脚数

4

供应商器件包装

LFPAK56, Power-SO8

厂商

Nexperia USA Inc.

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

150A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

7V, 10V

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

4V @ 1mA

Power Dissipation (Max)

294W (Ta)

MSL

-

Qualification

-

Continuous Drain Current Id

150A

Number of Elements per Chip

1

Package Type

LFPAK56E

Id - Continuous Drain Current

150 A

Typical Turn-Off Delay Time

45 ns

RoHS

Details

Rds On - Drain-Source Resistance

3.5 mOhms

Qg - Gate Charge

75 nC

Brand

Nexperia

Manufacturer

Nexperia

Part # Aliases

934661574115

Channel Mode

Enhancement

Mounting Styles

SMD/SMT

Factory Pack QuantityFactory Pack Quantity

1500

Minimum Operating Temperature

- 55 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Maximum Operating Temperature

+ 175 C

Transistor Polarity

N-Channel

Pd - Power Dissipation

294 W

Vgs th - Gate-Source Threshold Voltage

4 V

Typical Turn-On Delay Time

21 ns

Vds - Drain-Source Breakdown Voltage

80 V

系列

-

操作温度

-55°C ~ 175°C (TJ)

包装

MouseReel

子类别

MOSFETs

配置

Single

通道数量

1 Channel

功率耗散

294W

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

3.5mOhm @ 25A, 10V

输入电容(Ciss)(Max)@Vds

7227 pF @ 40 V

门极电荷(Qg)(最大)@Vgs

108 nC @ 10 V

上升时间

16 ns

漏源电压 (Vdss)

80 V

Vgs（最大值）

±20V

产品类别

MOSFET

晶体管类型

1 N-Channel

信道型

N通道

场效应管特性

-

产品类别

MOSFET