Nexperia USA Inc. PXN010-30QLJ

包装/外壳

8-PowerVDFN

安装类型

表面贴装

引脚数

8

供应商器件包装

MLPAK33

厂商

Nexperia USA Inc.

Power Dissipation (Max)

1.7W (Ta), 12.5W (Tc)

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

2.2V @ 250μA

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Current - Continuous Drain (Id) @ 25℃

10.3A (Ta), 28A (Tc)

Product Status

活跃

Continuous Drain Current Id

10.3

Package Type

MLPAK33

Qualification

-

Vds - Drain-Source Breakdown Voltage

30 V

Typical Turn-On Delay Time

5 ns

Vgs th - Gate-Source Threshold Voltage

2.2 V

Pd - Power Dissipation

4.3 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

3000

Mounting Styles

SMD/SMT

Forward Transconductance - Min

24 S

Channel Mode

Enhancement

Part # Aliases

934661597118

Manufacturer

Nexperia

Brand

Nexperia

Qg - Gate Charge

12.3 nC

Rds On - Drain-Source Resistance

13.6 mOhms

RoHS

Details

Typical Turn-Off Delay Time

6 ns

Id - Continuous Drain Current

10.3 A

操作温度

-55°C ~ 150°C (TJ)

包装

MouseReel

子类别

MOSFETs

配置

Single

通道数量

1 Channel

功率耗散

1.7

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

10.2mOhm @ 10.3A, 10V

输入电容(Ciss)(Max)@Vds

580 pF @ 15 V

门极电荷(Qg)(最大)@Vgs

12.3 nC @ 10 V

上升时间

8 ns

漏源电压 (Vdss)

30 V

Vgs（最大值）

±20V

产品类别

MOSFET

信道型

N

场效应管特性

-

产品类别

MOSFET