Nexperia USA Inc. PXN012-60QLJ

安装类型

表面贴装

包装/外壳

8-PowerVDFN

引脚数

8

供应商器件包装

MLPAK33

厂商

Nexperia USA Inc.

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

42A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

2.5V @ 1mA

Power Dissipation (Max)

34.7W (Tc)

Continuous Drain Current Id

42

Package Type

MLPAK33

MSL

MSL 1 - Unlimited

Qualification

-

Vds - Drain-Source Breakdown Voltage

60 V

Typical Turn-On Delay Time

8.8 ns

Vgs th - Gate-Source Threshold Voltage

2.5 V

Pd - Power Dissipation

34.7 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

3000

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Part # Aliases

934663033118

Manufacturer

Nexperia

Brand

Nexperia

Qg - Gate Charge

18.77 nC

Rds On - Drain-Source Resistance

11.5 mOhms

RoHS

Details

Typical Turn-Off Delay Time

12.2 ns

Id - Continuous Drain Current

42 A

系列

-

操作温度

-55°C ~ 150°C (TJ)

包装

MouseReel

子类别

MOSFETs

通道数量

1 Channel

功率耗散

34.7

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

11.5mOhm @ 10A, 10V

输入电容(Ciss)(Max)@Vds

957 pF @ 30 V

门极电荷(Qg)(最大)@Vgs

18.77 nC @ 10 V

上升时间

18.5 ns

漏源电压 (Vdss)

60 V

Vgs（最大值）

±20V

产品类别

MOSFET

晶体管类型

1 N-Channel

信道型

N

场效应管特性

-

产品类别

MOSFET