Nexperia USA Inc. PXN9R0-30QLJ

包装/外壳

8-PowerVDFN

安装类型

表面贴装

引脚数

8

供应商器件包装

MLPAK33

Power Dissipation (Max)

1.9W (Ta), 26W (Tc)

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

2.5V @ 250μA

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Current - Continuous Drain (Id) @ 25℃

11.4A (Ta), 41.8A (Tc)

Product Status

活跃

厂商

Nexperia USA Inc.

Continuous Drain Current Id

11.4

Package Type

MLPAK33

MSL

MSL 1 - Unlimited

Qualification

-

Vds - Drain-Source Breakdown Voltage

30 V

Typical Turn-On Delay Time

6 ns

Vgs th - Gate-Source Threshold Voltage

2.5 V

Pd - Power Dissipation

26 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

3000

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Part # Aliases

934662548118

Manufacturer

Nexperia

Brand

Nexperia

Qg - Gate Charge

20.7 nC

Rds On - Drain-Source Resistance

9.1 mOhms

RoHS

Details

Typical Turn-Off Delay Time

8 ns

Id - Continuous Drain Current

17.3 A

操作温度

-55°C ~ 150°C (TJ)

系列

-

包装

MouseReel

子类别

MOSFETs

配置

Single

通道数量

1 Channel

功率耗散

1.9

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

9.1mOhm @ 11.4A, 10V

输入电容(Ciss)(Max)@Vds

865 pF @ 15 V

门极电荷(Qg)(最大)@Vgs

20.7 nC @ 10 V

上升时间

9 ns

漏源电压 (Vdss)

30 V

Vgs（最大值）

±20V

产品类别

MOSFET

晶体管类型

1 N-Channel

信道型

N

场效应管特性

-

产品类别

MOSFET