Nexperia USA Inc. PXP012-30QLJ

包装/外壳

8-PowerVDFN

安装类型

表面贴装

供应商器件包装

MLPAK33

Power Dissipation (Max)

1.7W (Ta), 32W (Tc)

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

2V @ 250μA

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Current - Continuous Drain (Id) @ 25℃

8.9A (Ta), 38.8A (Tc)

Product Status

活跃

厂商

Nexperia USA Inc.

MSL

-

Qualification

-

Continuous Drain Current Id

15.2A

Vds - Drain-Source Breakdown Voltage

30 V

Vgs th - Gate-Source Threshold Voltage

2 V

Pd - Power Dissipation

32 W

Transistor Polarity

P-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 25 V, + 25 V

Minimum Operating Temperature

- 55 C

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Qg - Gate Charge

43.4 nC

Rds On - Drain-Source Resistance

12.8 mOhms

Id - Continuous Drain Current

15.2 A

操作温度

-55°C ~ 150°C (TJ)

系列

-

通道数量

1 Channel

功率耗散

4.8W

场效应管类型

P-Channel

Rds On(Max)@Id,Vgs

12.8mOhm @ 9A, 10V

输入电容(Ciss)(Max)@Vds

1400 pF @ 15 V

门极电荷(Qg)(最大)@Vgs

43.4 nC @ 10 V

漏源电压 (Vdss)

30 V

Vgs（最大值）

±25V

信道型

P Channel

场效应管特性

-