Nexperia USA Inc. PXP015-30QLJ
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PXP015-30QLJ
1729-PXP015-30QLJ
晶体管 - FET,MOSFET - 单个
8-PowerVDFN
大陆
立即发货

P-CHANNEL TRENCH MOSFET
1最小包装量--
PXP015-30QLJ详情
Nexperia USA Inc. PXP015-30QLJ重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
安装类型
表面贴装
包装/外壳
8-PowerVDFN
供应商器件包装
MLPAK33
厂商
Nexperia USA Inc.
Product Status
活跃
Current - Continuous Drain (Id) @ 25℃
8A (Ta), 24.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Voltage - Gate Threshold (Vgs(th)) (Max) @ Id
2V @ 250μA
Power Dissipation (Max)
1.7W (Ta), 16W (Tc)
MSL
-
Qualification
-
Continuous Drain Current Id
12.8A
Vds - Drain-Source Breakdown Voltage
30 V
Vgs th - Gate-Source Threshold Voltage
2 V
Pd - Power Dissipation
4.2 W
Transistor Polarity
P-Channel
Maximum Operating Temperature
+ 150 C
Vgs - Gate-Source Voltage
- 25 V, + 25 V
Minimum Operating Temperature
- 55 C
Mounting Styles
SMD/SMT
Channel Mode
Enhancement
Qg - Gate Charge
24.6 nC
Rds On - Drain-Source Resistance
22 mOhms
Id - Continuous Drain Current
12.8 A
操作温度
-55°C ~ 150°C (TJ)
通道数量
1 Channel
功率耗散
4.2W
场效应管类型
P-Channel
Rds On(Max)@Id,Vgs
15.8mOhm @ 8.1A, 10V
输入电容(Ciss)(Max)@Vds
1200 pF @ 15 V
门极电荷(Qg)(最大)@Vgs
36.9 nC @ 10 V
漏源电压 (Vdss)
30 V
Vgs(最大值)
±25V
信道型
P Channel
场效应管特性
-
PXP015-30QLJ拓展信息
Nexperia USA Inc.
Nexperia USA Inc.
Nexperia USA Inc.
Nexperia USA Inc.
Nexperia USA Inc.
Nexperia USA Inc.
Nexperia USA Inc.
Nexperia USA Inc.
Nexperia USA Inc.
Nexperia USA Inc.







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