Nexperia USA Inc. PXP018-30QLJ
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PXP018-30QLJ
1729-PXP018-30QLJ
晶体管 - FET,MOSFET - 单个
8-PowerVDFN
大陆
立即发货

PXP018-30QL/SOT8002/MLPAK33
1最小包装量--
PXP018-30QLJ详情
Nexperia USA Inc. PXP018-30QLJ重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
安装类型
表面贴装
包装/外壳
8-PowerVDFN
供应商器件包装
MLPAK33
厂商
Nexperia USA Inc.
Product Status
活跃
Current - Continuous Drain (Id) @ 25℃
7.5A (Ta), 19.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Voltage - Gate Threshold (Vgs(th)) (Max) @ Id
2.5V @ 250μA
Power Dissipation (Max)
1.7W (Ta)
Base Product Number
PXP018
Vds - Drain-Source Breakdown Voltage
30 V
Vgs th - Gate-Source Threshold Voltage
2.5 V
Pd - Power Dissipation
10.9 W
Transistor Polarity
N-Channel
Maximum Operating Temperature
+ 150 C
Vgs - Gate-Source Voltage
- 20 V, + 20 V
Minimum Operating Temperature
- 55 C
Factory Pack QuantityFactory Pack Quantity
3000
Mounting Styles
SMD/SMT
Channel Mode
Enhancement
Part # Aliases
934662614118
Manufacturer
Nexperia
Brand
Nexperia
Qg - Gate Charge
7.2 nC
Rds On - Drain-Source Resistance
15 mOhms
RoHS
Details
Id - Continuous Drain Current
11.3 A
系列
-
操作温度
-55°C ~ 150°C (TJ)
包装
MouseReel
子类别
MOSFETs
通道数量
1 Channel
场效应管类型
N-Channel
Rds On(Max)@Id,Vgs
18mOhm @ 7.5A, 10V
输入电容(Ciss)(Max)@Vds
447 pF @ 15 V
门极电荷(Qg)(最大)@Vgs
10.8 nC @ 10 V
漏源电压 (Vdss)
30 V
Vgs(最大值)
±20V
产品类别
MOSFET
场效应管特性
-
产品
MOSFET
产品类别
MOSFET
PXP018-30QLJ拓展信息
Nexperia USA Inc.
Nexperia USA Inc.
Nexperia USA Inc.
Nexperia USA Inc.
Nexperia USA Inc.
Nexperia USA Inc.
Nexperia USA Inc.
Nexperia USA Inc.
Nexperia USA Inc.
Nexperia USA Inc.







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