NXP Semiconductors BLF548,112

底架

Screw

引脚数

5

ECCN (US)

EAR99

Maximum Power Dissipation (mW)

330000

Typical Forward Transconductance (S)

3.5

Typical Output Capacitance @ Vds (pF)

90@28V

Typical Reverse Transfer Capacitance @ Vds (pF)

25@28V

Typical Input Capacitance @ Vds (pF)

105@28V

Maximum Drain Source Resistance (mOhm)

300@10V

Maximum Continuous Drain Current (A)

15

Maximum VSWR

10

Maximum Gate Source Voltage (V)

±20

Maximum Drain Source Voltage (V)

65

Number of Elements per Chip

2

Channel Mode

Enhancement

Package Width

10.29(Max)

Package Length

34.17(Max)

Package Height

5.39(Max)

Mounting

Screw

Military

无

Supplier Package

CDFM

AEC Qualified

Unknown

Maximum Operating Temperature (°C)

200

Minimum Operating Temperature (°C)

-65

Typical Drain Efficiency (%)

55

Minimum Frequency (MHz)

100

Maximum Frequency (MHz)

500

Typical Power Gain (dB)

11

Output Power (W)

150

PCB changed

5

Voltage, Rating

65 V

Number of Elements

2

RoHS

Compliant

包装

Bulk

零件状态

Obsolete

最高工作温度

200 °C

最小工作温度

-65 °C

最大功率耗散

330 W

额定电流

15 A

频率

500 MHz

引脚数量

5

配置

双共源

元素配置

Dual

功率耗散

330 W

输出功率

150 W

测试电流

160 A

漏源电压 (Vdss)

65 V

连续放电电流(ID)

15 A

栅极至源极电压(Vgs)

20 V

增益

11 dB

最高频率

500 MHz

最大输出功率

150 W

漏源击穿电压

65 V

信道型

N

漏源电阻

300 mΩ

操作方式

CW Class-B

测试电压

28 V

最小击穿电压

65 V

RoHS状态

供应商未确认

无铅

无铅