NXP Semiconductors BLF6G20-45

表面安装

YES

终端数量

2

晶体管元件材料

SILICON

ECCN (US)

EAR99

Channel Mode

Enhancement

Number of Elements per Chip

1

Process Technology

LDMOS

Maximum Drain Source Voltage (V)

65

Maximum Gate Source Voltage (V)

13

Maximum VSWR

10

Maximum Continuous Drain Current (A)

13

Maximum Drain Source Resistance (mOhm)

200(Typ)@6.15V

Typical Forward Transconductance (S)

5

Output Power (W)

2.5(Typ)

Typical Power Gain (dB)

19.2

Maximum Frequency (MHz)

2000

Minimum Frequency (MHz)

1805

Typical Drain Efficiency (%)

14

Minimum Operating Temperature (°C)

-65

Maximum Operating Temperature (°C)

225

AEC Qualified

Unknown

Supplier Package

CDFM

Military

无

Mounting

Screw

Package Height

4.62(Max)

Package Length

20.45(Max)

Package Width

10.29(Max)

PCB changed

3

Package Description

ROHS COMPLIANT, CERAMIC PACKAGE-2

Package Style

FLANGE MOUNT

Package Body Material

CERAMIC, METAL-SEALED COFIRED

Reflow Temperature-Max (s)

未说明

Operating Temperature-Max

150 °C

Rohs Code

有

Manufacturer Part Number

BLF6G20-45

Package Shape

RECTANGULAR

Manufacturer

恩智浦半导体

Number of Elements

1

Part Life Cycle Code

Obsolete

Ihs Manufacturer

NXP SEMICONDUCTORS

Risk Rank

5.68

Drain Current-Max (ID)

13 A

无铅代码

有

零件状态

Obsolete

ECCN 代码

EAR99

子类别

FET 通用电源

端子位置

DUAL

终端形式

FLAT

峰值回流焊温度（摄氏度）

未说明

Reach合规守则

unknown

引脚数量

3

JESD-30代码

R-CDFM-F2

资历状况

不合格

配置

Single

操作模式

增强型MOSFET

箱体转运

SOURCE

晶体管应用

AMPLIFIER

极性/通道类型

N-CHANNEL

DS 击穿电压-最小值

65 V

信道型

N

场效应管技术

METAL-OXIDE SEMICONDUCTOR

最高频段

L带

操作方式

2-Carrier W-CDMA

RoHS状态

符合RoHS标准