NXP Semiconductors BLL6H0514-25

表面安装

YES

引脚数

3

终端数量

2

晶体管元件材料

SILICON

ECCN (US)

EAR99

Channel Mode

Enhancement

Number of Elements per Chip

1

Process Technology

LDMOS

Maximum Drain Source Voltage (V)

100

Maximum Gate Source Voltage (V)

13

Maximum Gate Threshold Voltage (V)

2.4

Maximum VSWR

10

Maximum Continuous Drain Current (A)

2.5

Maximum Gate Source Leakage Current (nA)

100

Maximum IDSS (uA)

1

Maximum Drain Source Resistance (mOhm)

[email protected]

Typical Forward Transconductance (S)

0.15

Output Power (W)

25(Min)

Typical Power Gain (dB)

21

Maximum Frequency (MHz)

1400

Minimum Frequency (MHz)

500

PCB changed

3

Package Width

5.97(Max)

Package Length

20.45(Max)

Package Height

4.67(Max)

Mounting

Screw

Military

无

Supplier Package

LDMOST

Maximum Operating Temperature (°C)

200

Minimum Operating Temperature (°C)

-65

Typical Drain Efficiency (%)

59

Typical Rise Time (ns)

20

Typical Fall Time (ns)

6

RoHS

Compliant

Package Description

ROHS COMPLIANT, CERAMIC PACKAGE-2

Package Style

FLANGE MOUNT

Package Body Material

CERAMIC, METAL-SEALED COFIRED

Reflow Temperature-Max (s)

未说明

Operating Temperature-Max

200 °C

Rohs Code

有

Manufacturer Part Number

BLL6H0514-25

Package Shape

RECTANGULAR

Manufacturer

恩智浦半导体

Number of Elements

1

Part Life Cycle Code

Transferred

Ihs Manufacturer

NXP SEMICONDUCTORS

Risk Rank

5.69

Drain Current-Max (ID)

2.5 A

零件状态

NRND

ECCN 代码

EAR99

最高工作温度

200 °C

最大功率耗散

25 W

端子位置

DUAL

终端形式

FLAT

峰值回流焊温度（摄氏度）

未说明

Reach合规守则

compliant

引脚数量

3

JESD-30代码

R-CDFM-F2

资历状况

不合格

配置

Single

操作模式

增强型MOSFET

箱体转运

SOURCE

晶体管应用

AMPLIFIER

漏源电压 (Vdss)

100 V

极性/通道类型

N-CHANNEL

连续放电电流(ID)

2.5 A

DS 击穿电压-最小值

100 V

信道型

N

场效应管技术

METAL-OXIDE SEMICONDUCTOR

最高频段

L带

操作方式

脉冲射频

RoHS状态

符合RoHS标准

达到SVHC

无SVHC