Qorvo QPD1003

包装/外壳

RF-565

RoHS

Details

Transistor Polarity

N-Channel

Vds - Drain-Source Breakdown Voltage

50 V

Vgs - Gate-Source Breakdown Voltage

145 V

Id - Continuous Drain Current

15 A

Minimum Operating Temperature

- 40 C

Maximum Operating Temperature

+ 85 C

Pd - Power Dissipation

370 W

Mounting Styles

SMD/SMT

Development Kit

QPD1003PCB401

Moisture Sensitive

有

Factory Pack QuantityFactory Pack Quantity

18

Vgs th - Gate-Source Threshold Voltage

- 2.8 V

Part # Aliases

1131389 1131389

Unit Weight

3.691596 oz

包装

Tray

系列

QPD1003

工作频率

1.2 GHz to 1.4 GHz

配置

Single

输出功率

540 W

晶体管类型

HEMT

工作温度范围

- 40 C to + 85 C

增益

19.9 dB