Qorvo QPD1008

包装/外壳

NI-360

Transistor Polarity

N-Channel

Vds - Drain-Source Breakdown Voltage

50 V

Vgs - Gate-Source Breakdown Voltage

145 V

Id - Continuous Drain Current

4 A

Minimum Operating Temperature

- 40 C

Maximum Operating Temperature

+ 85 C

Pd - Power Dissipation

127 W

Mounting Styles

SMD/SMT

Development Kit

QPD1008PCB401

Moisture Sensitive

有

Factory Pack QuantityFactory Pack Quantity

25

Vgs th - Gate-Source Threshold Voltage

- 2.8 V

Unit Weight

0.566059 oz

RoHS

Details

包装

Tray

系列

QPD1008

工作频率

3.2 GHz

配置

Single

输出功率

162 W

晶体管类型

HEMT

工作温度范围

- 40 C to + 85 C

增益

17.5 dB