Qorvo QPD1009

包装/外壳

QFN-16

Transistor Polarity

N-Channel

Vds - Drain-Source Breakdown Voltage

50 V

Vgs - Gate-Source Breakdown Voltage

145 V

Id - Continuous Drain Current

700 mA

Minimum Operating Temperature

- 40 C

Maximum Operating Temperature

+ 85 C

Pd - Power Dissipation

17.5 W

Mounting Styles

SMD/SMT

Development Kit

QPD1009-EVB1

Moisture Sensitive

有

Factory Pack QuantityFactory Pack Quantity

50

Vgs th - Gate-Source Threshold Voltage

- 2.8 V

Part # Aliases

1132865 1132865

Unit Weight

0.203046 oz

RoHS

Details

包装

Tray

系列

QPD1009

工作频率

4 GHz

配置

Single

输出功率

17 W

晶体管类型

HEMT

工作温度范围

- 40 C to + 85 C

增益

24 dB