Qorvo QPD1016L

包装/外壳

NI-780

Factory Pack QuantityFactory Pack Quantity

25

RoHS

Details

Transistor Polarity

P-Channel

Vds - Drain-Source Breakdown Voltage

-

Vgs - Gate-Source Breakdown Voltage

-

Id - Continuous Drain Current

1 A

Maximum Drain Gate Voltage

50 V

Minimum Operating Temperature

-

Maximum Operating Temperature

-

Pd - Power Dissipation

714 W

Mounting Styles

法兰安装

Moisture Sensitive

有

系列

QPD1016L

工作频率

DC to 1.7 GHz

输出功率

537 W

晶体管类型

JFET

增益

18 dB