Qorvo TGF2977-SM

包装/外壳

QFN-16

RoHS

Details

Transistor Polarity

N-Channel

Vds - Drain-Source Breakdown Voltage

32 V

Vgs - Gate-Source Breakdown Voltage

- 2.7 V

Id - Continuous Drain Current

326 mA

Maximum Operating Temperature

+ 225 C

Pd - Power Dissipation

8.4 W

Mounting Styles

SMD/SMT

Development Kit

TGF2977-SMEVB1

Moisture Sensitive

有

Factory Pack QuantityFactory Pack Quantity

50

Part # Aliases

1127257 1127257

Unit Weight

0.002014 oz

包装

Tray

系列

TGF2977

类型

GaN SiC HEMT

工作频率

DC to 12 GHz

配置

Single

通道数量

1 Channel

输出功率

6 W

晶体管类型

HEMT

增益

13 dB

高度

0.203 mm

长度

3 mm

宽度

3 mm