Rohm RSR025N05TL

包装/外壳

SOT-346T-3

安装类型

表面贴装

供应商器件包装

TSMT3

Continuous Drain Current

2.5(A)

Drain-Source On-Volt

45(V)

Operating Temperature Classification

Military

Package Type

TSMT

Operating Temp Range

-55C to 150C

Gate-Source Voltage (Max)

±20(V)

Channel Mode

Enhancement

Number of Elements

1

Rad Hardened

无

Mounting

表面贴装

Vds - Drain-Source Breakdown Voltage

45 V

Typical Turn-On Delay Time

9 ns

Vgs th - Gate-Source Threshold Voltage

3 V

Pd - Power Dissipation

1 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

3000

Mounting Styles

SMD/SMT

Part # Aliases

RSR025N05

Manufacturer

ROHM 半导体

Brand

ROHM 半导体

Qg - Gate Charge

3.6 nC

Rds On - Drain-Source Resistance

100 mOhms

RoHS

Details

Typical Turn-Off Delay Time

25 ns

Id - Continuous Drain Current

2.5 A

Package

Tape & Reel (TR);Cut Tape (CT);Digi-Reel®;

Current - Continuous Drain (Id) @ 25℃

2.5A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4V, 10V

厂商

Rohm Semiconductor

Power Dissipation (Max)

700mW (Ta)

Product Status

活跃

包装

卷带

操作温度

150°C (TJ)

系列

-

类型

小信号

子类别

MOSFETs

技术

Si

引脚数量

3

极性

N

通道数量

1 Channel

功率耗散

1(W)

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

100mOhm @ 2.5A, 10V

不同 Id 时 Vgs(th)（最大值）

3V @ 1mA

输入电容(Ciss)(Max)@Vds

260 pF @ 10 V

门极电荷(Qg)(最大)@Vgs

3.6 nC @ 5 V

上升时间

11 ns

漏源电压 (Vdss)

45 V

Vgs（最大值）

±20V

产品类别

MOSFET

场效应管特性

-

产品类别

MOSFET