RXH090N03TB1详情
Rohm RXH090N03TB1重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
包装/外壳
SOP-8
安装类型
表面贴装
供应商器件包装
8-SOP
Vds - Drain-Source Breakdown Voltage
30 V
Typical Turn-On Delay Time
8 ns
Vgs th - Gate-Source Threshold Voltage
2.5 V
Pd - Power Dissipation
2 W
Transistor Polarity
N-Channel
Maximum Operating Temperature
+ 150 C
Vgs - Gate-Source Voltage
- 20 V, + 20 V
Factory Pack QuantityFactory Pack Quantity
2500
Mounting Styles
SMD/SMT
Channel Mode
Enhancement
Manufacturer
ROHM 半导体
Brand
ROHM 半导体
Id - Continuous Drain Current
9 A
Typical Turn-Off Delay Time
30 ns
RoHS
Details
Rds On - Drain-Source Resistance
17 mOhms
Qg - Gate Charge
6.8 nC
Package
Tape & Reel (TR);Cut Tape (CT);Digi-Reel®;
Current - Continuous Drain (Id) @ 25℃
9A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4V, 10V
厂商
Rohm Semiconductor
Power Dissipation (Max)
2W (Ta)
Product Status
活跃
包装
MouseReel
操作温度
150°C
系列
-
子类别
MOSFETs
技术
Si
配置
Single
通道数量
1 Channel
场效应管类型
N-Channel
Rds On(Max)@Id,Vgs
17mOhm @ 9A, 10V
不同 Id 时 Vgs(th)(最大值)
2.5V @ 1mA
输入电容(Ciss)(Max)@Vds
440 pF @ 10 V
门极电荷(Qg)(最大)@Vgs
6.8 nC @ 5 V
上升时间
30 ns
漏源电压 (Vdss)
30 V
Vgs(最大值)
±20V
产品类别
MOSFET
场效应管特性
-
产品类别
MOSFET
RXH090N03TB1拓展信息
ROHM Semiconductor
ROHM Semiconductor
ROHM Semiconductor
ROHM Semiconductor
ROHM Semiconductor
ROHM Semiconductor
ROHM Semiconductor
ROHM Semiconductor
ROHM Semiconductor
ROHM Semiconductor








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