Rohm Semiconductor BSS138BKT116

安装类型

表面贴装

包装/外壳

TO-236-3, SC-59, SOT-23-3

供应商器件包装

SOT-23

厂商

Rohm Semiconductor

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

400mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 10V

Power Dissipation (Max)

200mW (Ta)

Continuous Drain Current

0.4(A)

Drain-Source On-Volt

60(V)

Operating Temperature Classification

Military

Package Type

SOT-23

Operating Temp Range

-55C to 150C

Gate-Source Voltage (Max)

±20(V)

Channel Mode

Enhancement

Number of Elements

1

Rad Hardened

无

Mounting

表面贴装

MSL

-

Qualification

-

Continuous Drain Current Id

400mA

Vds - Drain-Source Breakdown Voltage

60 V

Typical Turn-On Delay Time

4.6 ns

Vgs th - Gate-Source Threshold Voltage

2 V

Pd - Power Dissipation

350 mW

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

3000

Mounting Styles

SMD/SMT

Manufacturer

ROHM 半导体

Brand

ROHM 半导体

Rds On - Drain-Source Resistance

680 mOhms

RoHS

Details

Typical Turn-Off Delay Time

17 ns

Id - Continuous Drain Current

400 mA

系列

-

操作温度

150°C (TJ)

包装

卷带

类型

小信号

子类别

MOSFETs

引脚数量

3

极性

N

配置

Single

通道数量

1 Channel

功率耗散

0.35(W)

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

680mOhm @ 400mA, 10V

不同 Id 时 Vgs(th)（最大值）

2V @ 10μA

输入电容(Ciss)(Max)@Vds

47 pF @ 30 V

上升时间

5.2 ns

漏源电压 (Vdss)

60 V

Vgs（最大值）

±20V

产品类别

MOSFET

信道型

N通道

场效应管特性

-

产品类别

MOSFET