Rohm Semiconductor BSS138BWAHZGT106

安装类型

表面贴装

包装/外壳

SC-70, SOT-323

引脚数

3

供应商器件包装

SOT-323

厂商

Rohm Semiconductor

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

380mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 10V

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

2V @ 10μA

Power Dissipation (Max)

200mW

MSL

-

Qualification

AEC-Q101

Continuous Drain Current Id

380mA

Number of Elements per Chip

1

Package Type

UMT

Channel Mode

Enhancement

Vds - Drain-Source Breakdown Voltage

60 V

Typical Turn-On Delay Time

4.6 ns

Vgs th - Gate-Source Threshold Voltage

2 V

Pd - Power Dissipation

300 mW

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

3000

Mounting Styles

SMD/SMT

Manufacturer

ROHM 半导体

Brand

ROHM 半导体

Qg - Gate Charge

-

Rds On - Drain-Source Resistance

680 mOhms

RoHS

Details

Typical Turn-Off Delay Time

17 ns

Id - Continuous Drain Current

380 mA

系列

Automotive, AEC-Q101

操作温度

150°C (TJ)

包装

切割胶带

子类别

MOSFETs

配置

Single

通道数量

1 Channel

功率耗散

300mW

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

680mOhm @ 380mA, 10V

输入电容(Ciss)(Max)@Vds

47 pF @ 30 V

上升时间

5.2 ns

漏源电压 (Vdss)

60 V

Vgs（最大值）

±20V

产品类别

MOSFET

信道型

N通道

场效应管特性

-

产品类别

MOSFET