ROHM Semiconductor BSS138WT106
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BSS138WT106
2078-BSS138WT106
晶体管 - FET,MOSFET - 单个
SOT-323-3
大陆
立即发货

MOSFET Nch 60V 310mA, SOT-323, Small Signal MOSFET
--最小包装量--
BSS138WT106详情
ROHM Semiconductor BSS138WT106重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
包装/外壳
SOT-323-3
安装类型
表面贴装
供应商器件包装
UMT3
RoHS
Details
Mounting Styles
SMD/SMT
Transistor Polarity
N-Channel
Vds - Drain-Source Breakdown Voltage
60 V
Id - Continuous Drain Current
310 mA
Rds On - Drain-Source Resistance
2.4 Ohms
Vgs - Gate-Source Voltage
- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage
2.3 V
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Pd - Power Dissipation
300 mW
Channel Mode
Enhancement
Fall Time
28 ns
Factory Pack QuantityFactory Pack Quantity
3000
Typical Turn-Off Delay Time
18 ns
Typical Turn-On Delay Time
3.5 ns
Package
Tape & Reel (TR);Cut Tape (CT);Digi-Reel®;
Current - Continuous Drain (Id) @ 25℃
310mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 10V
厂商
Rohm Semiconductor
Power Dissipation (Max)
200mW (Ta)
Product Status
活跃
包装
MouseReel
操作温度
150°C (TJ)
系列
OptiMOS®
配置
Single
通道数量
1 Channel
场效应管类型
N-Channel
Rds On(Max)@Id,Vgs
2.4Ohm @ 310mA, 10V
不同 Id 时 Vgs(th)(最大值)
2.3V @ 1mA
输入电容(Ciss)(Max)@Vds
15 pF @ 30 V
上升时间
5 ns
漏源电压 (Vdss)
60 V
Vgs(最大值)
±20V
晶体管类型
1 N-Channel
场效应管特性
-
BSS138WT106拓展信息
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