ROHM Semiconductor BSS670T116

包装/外壳

SOT-23-3

安装类型

表面贴装

供应商器件包装

SST3

RoHS

Details

Mounting Styles

SMD/SMT

Transistor Polarity

N-Channel

Vds - Drain-Source Breakdown Voltage

60 V

Id - Continuous Drain Current

650 mA

Rds On - Drain-Source Resistance

680 mOhms

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Vgs th - Gate-Source Threshold Voltage

2 V

Minimum Operating Temperature

- 55 C

Maximum Operating Temperature

+ 150 C

Pd - Power Dissipation

350 mW

Channel Mode

Enhancement

Fall Time

15 ns

Factory Pack QuantityFactory Pack Quantity

3000

Typical Turn-Off Delay Time

17 ns

Typical Turn-On Delay Time

4.6 ns

Package

Tape & Reel (TR);Cut Tape (CT);Digi-Reel®;

Current - Continuous Drain (Id) @ 25℃

650mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 10V

厂商

Rohm Semiconductor

Power Dissipation (Max)

200mW (Ta)

Product Status

活跃

包装

MouseReel

操作温度

150°C (TJ)

系列

OptiMOS®

配置

Single

通道数量

1 Channel

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

680mOhm @ 650mA, 10V

不同 Id 时 Vgs(th)（最大值）

2V @ 10µA

输入电容(Ciss)(Max)@Vds

47 pF @ 30 V

上升时间

5.2 ns

漏源电压 (Vdss)

60 V

Vgs（最大值）

±20V

晶体管类型

1 N-Channel

场效应管特性

-