Rohm Semiconductor BSS84WAHZGT106

安装类型

表面贴装

包装/外壳

SC-70, SOT-323

供应商器件包装

UMT3

厂商

Rohm Semiconductor

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

210mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

2.5V @ 100μA

Power Dissipation (Max)

300mW (Ta)

Package Type

SOT

Vds - Drain-Source Breakdown Voltage

60 V

Typical Turn-On Delay Time

12 ns

Vgs th - Gate-Source Threshold Voltage

2.5 V

Pd - Power Dissipation

300 mW

Transistor Polarity

P-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

3000

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Manufacturer

ROHM 半导体

Brand

ROHM 半导体

Rds On - Drain-Source Resistance

5.3 mOhms

RoHS

Details

Typical Turn-Off Delay Time

140 ns

Id - Continuous Drain Current

210 mA

系列

Automotive, AEC-Q101

操作温度

150°C (TJ)

包装

MouseReel

子类别

MOSFETs

通道数量

1 Channel

场效应管类型

P-Channel

Rds On(Max)@Id,Vgs

5.3Ohm @ 210mA, 10V

输入电容(Ciss)(Max)@Vds

34 pF @ 30 V

上升时间

22 ns

漏源电压 (Vdss)

60 V

Vgs（最大值）

±20V

产品类别

MOSFET

晶体管类型

1 P-Channel

信道型

P

场效应管特性

-

产品类别

MOSFET