ROHM Semiconductor BSS84WT106

包装/外壳

SOT-323-3

安装类型

表面贴装

供应商器件包装

UMT3

RoHS

Details

Mounting Styles

SMD/SMT

Transistor Polarity

P-Channel

Vds - Drain-Source Breakdown Voltage

60 V

Id - Continuous Drain Current

210 mA

Rds On - Drain-Source Resistance

5.3 Ohms

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Vgs th - Gate-Source Threshold Voltage

2.5 V

Minimum Operating Temperature

- 55 C

Maximum Operating Temperature

+ 150 C

Pd - Power Dissipation

300 mW

Channel Mode

Enhancement

Fall Time

56 ns

Factory Pack QuantityFactory Pack Quantity

3000

Typical Turn-Off Delay Time

140 ns

Typical Turn-On Delay Time

12 ns

Package

Tape & Reel (TR);Cut Tape (CT);Digi-Reel®;

Current - Continuous Drain (Id) @ 25℃

210mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

厂商

Rohm Semiconductor

Power Dissipation (Max)

200mW (Ta)

Product Status

活跃

包装

MouseReel

操作温度

150°C (TJ)

系列

OptiMOS®

配置

Single

通道数量

1 Channel

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

5.3Ohm @ 210mA, 10V

不同 Id 时 Vgs(th)（最大值）

2.5V @ 200µA

输入电容(Ciss)(Max)@Vds

34 pF @ 30 V

上升时间

22 ns

漏源电压 (Vdss)

60 V

Vgs（最大值）

±20V

晶体管类型

1 P-Channel

场效应管特性

-