ROHM Semiconductor GNP1150TCA-ZE2

包装/外壳

DFN8080AK-8

Vds - Drain-Source Breakdown Voltage

650 V

Vgs th - Gate-Source Threshold Voltage

2.4 V

Pd - Power Dissipation

62.5 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 10 V, + 6 V

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Qg - Gate Charge

2.7 nC

Rds On - Drain-Source Resistance

195 mOhms

Id - Continuous Drain Current

11 A

技术

GaN

通道数量

1 Channel